Feb 6, 2017: GaN Systems has experienced a surge in the number of customers designing and deploying power systems using their GaN transistors. Customers have recognized that GaN devices significantly improve power efficiency and power density. By using GaN transistors instead of legacy silicon components; customers are gaining a competitive advantage as they enter the market with 50 W to 50 kW power systems that are up to 5X smaller and 3X lighter.
To support customers who are modeling new systems using SPICE simulations, GaN Systems has released individual computer models for each of their products as well as a new application note, GN007, “Modeling Thermal Behavior of GaN Systems’ GaNPX Using RC Thermal SPICE Model”.
GaN Systems’ transistors are built in a feature-rich GaNPX package which is designed for extreme speed and current. The low profile GaNPX package has high power dissipation and low inductance which enables fast, MHz power switching. Customers can now verify the package’s optimal thermal performance by using the GN007 SPICE model protocol.
“Our customers are constantly pushing on design limits that only our GaN can enable,” states Larry Spaziani, VP of Sales and Marketing, GaN Systems. “We’ve invested in expert thermal simulations that use state-of-the-art Finite Element Analysis tools to model our best-in-class power devices. The models have been converted into easy-to-use SPICE models and have been verified both in multiple simulation environments and in the test laboratory.”
GaN Systems is the place electronics designers go to realize all the system benefits of gallium nitride transistors in their power conversion applications. To overcome silicon’s limitations in switching speed, voltage and current, the company develops the most complete range of gallium nitride power switching transistors for consumer, datacenter, industrial and transportation markets. GaN Systems’ Island Technology® addresses today’s challenges of cost, performance, and manufacturability resulting in products that are smaller and more efficient than other GaN design approaches. The fabless semiconductor company is headquartered in Ottawa, Canada.