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Shuji Nakamura hails Gallium Nitride LED and Laser Technology

Shuji Nakamura hails Gallium Nitride LED and Laser Technology

By BizLED Bureau

Jan 15, 2016: Addressing a forum at Lighting Japan 2016 at Tokyo Big Sight, Japan, Nobel laureate Shuji Nakamura mentioned GaN-on-GaN LED and Laser Diodes (LD) as the upcoming lighting technologies of our future.

The GaN-on-GaN LEDs are the second generation LEDs. The blue LED was the first generation LED solve the p-n type issues in LEDs and the second generation will upgrade it further, said Nakamura.

These GaN-on-GaN LEDs are primarily made from flip chips that use violet light as its primary emission to receive the standard luminous efficacy. ?The average luminous efficacy of an LED is is close to 50% – 60%, but GaN-on-GaN LEDs can outperform old LEDs to reach upto 84%,? stated Nakamura. This brings a huge difference in the device?s energy consumption. Moreover, the target is to create an artificial light resource that matches natural sunlight. Hence, the current series of products outperform traditional LEDs in the field of color rendering as they highlight their ability to match natural light sources.

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Coming on to laser diodes, Nakamura made a note that this is third generation solid state lighting (SSL) technology that has great future potential. Lasers luminous efficacy can reach upto 84%, which is much higher than conventional LEDs of 50% to 60%. Laser light sources has an advantage of being manufactured in smaller sizes, which are preferred by manufacturers. These next generation light sources can be found in TV backlight in the market. Automobile giants, BMW, have cars equipped with LD headlights which are available in the U.S. market, and Nakamura sees a promising growth for market?s future developments.

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