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Toshiba launches 1W GaN-on-Si white LEDs

Toshiba launches 1W GaN-on-Si white LEDs

September 21, 2014: Toshiba Electronics Europe has extended its LETERAS family of white LEDs with a new series of ultra-compact devices that combine cost-effective gallium nitride-on-silicon (GaN-on-Si) chips with an industrial-standard 3535 lens type package.

High-performance white LEDs have been fabricated on expensive sapphire substrates using relatively small 100mm or 150mm wafers. However, LETERAS LEDs use a cost-effective GaN-on-Si process technology that allows GaN LEDs to be produced on 200mm silicon wafers.

Devices in the TL1L3 series of 1.0W LEDs are supplied in a package with a footprint of 3.5mm x 3.5mm and a height (including lens) of just 2.42mm. Despite their small size, the LEDs deliver typical luminous flux ratings of 112-145 lumens, depending on the correlated colour temperature (CCT).

According to Toshiba, its latest LEDs with integrated lens are suitable for implementation in tubelights, light bulbs, downlights and ceiling lights, as well as streetlight and floodlight designs.

The new TL1L3 LED series comprises seven devices offering colour temperatures ranging from 2700K to 6500K. Minimum colour rendering index (Ra) ratings of up to 80 contribute to natural-looking lighting across all target applications, it is claimed. A low typical forward voltage (VF) of just 2.85V (at a forward current of 350mA) helps to keep power consumption to a minimum, the firm adds.

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